Samsung Electronics accelerates development of next-generation high-bandwidth memory; the first batch of HBM4E will be produced in May

Golden Ten Data reported on April 17 that Samsung Electronics is ramping up the development of its next-generation high-bandwidth memory (HBM) products, aiming to further strengthen its position in the high-end AI memory market. According to reports, Samsung Electronics plans to produce the first batch of HBM4E samples meeting NVIDIA's standards as early as May 2026. Industry insiders revealed that Samsung has a clear and tight timeline, targeting the successful production of sample HBM4E core logic chips by its foundry division before mid-next month. (ChosunBiz)